symbol test conditions maximum ratings unit i t(av) i t(rms) single phase, half wave, 180 o c conduction,t c =114 o c 250 392 a a 2 s t vj t vjm t stg -30...+150 150 -30...+125 o c weight 210 g i 2 t i tsm p gm p g(av) i fgm v fgm v rgm di/dt ms to heatsink m6 3 ~ 5 mt to terminals m 6 2.5 5 nm 1/2cycle, 50hz/60hz, peak value, non-repetitive 6750/7420 a 620000 10 1 w 3 a 10 5 v ig=15 0ma, tj=25 o c, v d =1/2v drm , di g /dt=1a/us 60 a /us ~ three phase thyristor module (half bridge) 3ta 250gkxxnb dimensions in mm (1mm = 0.0394") type 3TA250GK03NB 3ta250gk04nb v rrm v 300 400 v rsm v 400 500 k1 g1 k2 g2 3g 3k 1 2 3 a k3 k2 k1 k3 k2 k1 a g3 g2 k2 k3 k1 g1
symbol test conditions unit i rrm v tm v i gt i drm ma r thjc v gd tgt min. typ. max. at v drm, single phase, half wave, tj=150 o c on-state current 750 a, tj=25 o c inst. measurement dv/dt i h tj=25 o c, i t =1a, v d =6v tj=150 o c, v d =1/2v drm i t =100a, i g =200ma, tj=25 o c, v d =1/2v drm , di g /dt=1a/us tj=150 o c, v d =2/3v drm , exponential wave tj=25 o c junction to case (1/3 module) 80 80 1.25 200 0.25 10 150 150 0.09 ma v us v/us ma o c/w application: v gt 2 v three phase thyristor module (half bridge) features * international standard package * glass passivated chips * rohs compliance advantages * space and weight savings * simple mounting with two screws * improved temperature and power cycling * reduced protection circuits applications * welding machine power supply * dc power supply * copper base plate 3ta20gkxxnb three phase thyristor module (half bridge)
` ` ` transient thermal impedance time t sec transient thermal impedance j-c/w per one element junction to case 360 2 conduction angle case temperaturesingle phase half wave average on-state currenta allowable case temperature d.c. per one element ?30 b ?60 b ?90 b ?120 b ?180 b on-state voltage max on-state voltagev on-state currenta non-repetitive timecycles surge on-state current a hz per one element : conduction angle 360 2 per one element ?90 b single phase half wave average on-state currenta power dissipationw d.c. ?30 b ?60 b ?120 b ?180 b gate characteristics gate currentma gate voltage v peak gate current a power 10w average gate power 1w maximum gate voltage that will not terigger any unit 7000 4000 5000 6000 3000 8000 3ta250gkxxnb three phase thyristor module (half bridge)
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